Characterization of a full military temperature range one megabit bubble memory device

The extension of the operating temperature range of commercial one megabit bubble memory devices to include temperatures between -55°C and 85°C by compensating the bias field and function currents has been previously demonstrated. A further extension of this temperature range to cover all temperatures between -55° and +125°C has been made possible by the development of new Bismuth-substituted CaGe garnets with higher Curie points giving improved high temperature operation. This paper presents characterization data on devices fabricated on this new material and shows that full military temperature range bubble device operation is possible.