• DocumentCode
    1016175
  • Title

    The vacuum evaporation of single crystal thin films of silicon

  • Author

    Hale, A.P. ; James, B.D.

  • Author_Institution
    Fairchild Semiconductor Corp., Mountain View, Calif.
  • Volume
    8
  • Issue
    2
  • fYear
    1961
  • fDate
    3/1/1961 12:00:00 AM
  • Firstpage
    175
  • Lastpage
    175
  • Keywords
    Epitaxial growth; Filling; Gain; Germanium; Guns; Hydrogen; Magnetic fields; Masers; Semiconductor films; Semiconductor thin films; Silicon; Solid state circuits; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1961.14735
  • Filename
    1472898