Title :
Epitaxial growth of germanium and silicon single crystal films from the vapor phase
Author_Institution :
Motorola, Inc., Phoenix, Ariz.
fDate :
3/1/1961 12:00:00 AM
Keywords :
Bandwidth; Epitaxial growth; Filling; Germanium; Guns; Hydrogen; Magnetic fields; Masers; Semiconductor films; Silicon; Solid state circuits; Substrates; Temperature;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14739
