Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs

Author

Liu, Chuan-Hsi ; Pan, Tung-Ming

Author_Institution

Ming Chuan Univ., Taoyuan

Volume

54

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

1799

Lastpage

1803

Abstract

In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

Keywords

MOSFET; carrier mobility; hot carriers; interface states; semiconductor device reliability; silicon; stability; I-V characteristics; Si - Element; control pMOSFET devices; hot carrier degradation; impact ionization current; interface traps; negative-bias temperature instability; reliability degradations; strained-Si nMOSFET devices; Buffer layers; CMOS technology; Degradation; Electron mobility; Hot carriers; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Photonic band gap; Titanium compounds; Bulk-Si; carrier mobility; hot carrier (HC); negative bias temperature instability (NBTI); strained-Si;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.898668

Filename

4252370