Title :
Perpendicular magnetic Fe-Sn-O films
Author :
Akutsu, N. ; Akimitsu, M. ; Mizoguchi, T.
Author_Institution :
Gakushuin University, Mejiro, Tokyo, Japan
fDate :
9/1/1986 12:00:00 AM
Abstract :
Iron oxide based thin films containing Sn prepared by RF sputtering have been found to have sufficient perpendicular magnetic anisotropy to be usable for perpendicular magnetic recording media. The perpendicular anisotropy field is 4.3 kOe, the magnetization is 310 emu/cc, the coercive force with field perpendicular to the film plane is 800 Oe and the ratio of parallel to perpendicular residual magnetization is 0.5 for a Fe0.458Sn0.088O0.454film.
Keywords :
Perpendicular magnetic recording; Anisotropic magnetoresistance; Coercive force; Iron; Magnetic films; Magnetization; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Radio frequency; Sputtering; Tin;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1986.1064345
