Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF

We present an experimental methodology that demonstrates the suitability of the conventional three-lumped- parameter model for gate impedance of MOSFET devices at frequencies from dc to the gigahertz range, which permits accurate extraction of model parameters. The parasitic effects at a high frequency are minimized by using radio frequency techniques (i.e., short return paths and de-embedding structures), whereas a robust parameter extraction algorithm overcomes possible instrument inaccuracies. When combined, these allow simultaneous extraction of all three parameters (i.e., C_gate, R_DT and R_series) from the model. The technique is applied to conventional SiO₂ -based MOSFET devices and to ultraleaky HfO₂ devices with aggressively scaled gate dielectric thickness.