Title :
High-speed Esaki switching diodes
Author_Institution :
IBM Corp., Poughkeepsie, N. Y.
fDate :
3/1/1961 12:00:00 AM
Keywords :
Alloying; Capacitance; Circuit testing; Circuits; Diodes; Encapsulation; Fabrication; Germanium; Klystrons; Microwave amplifiers; Noise figure; Power generation; Refrigeration; Semiconductor diodes; Temperature; Thermoelectricity; Tunable circuits and devices;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14771
