Title :
Temperature-dependent study of the interfacial resistances in polysilicon-emitter contacts
Author :
Yung, Shuy-young ; Burk, Dorothea E.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
From a comparison of the functional dependences of the measured interfacial resistance with those simulated by a rigorous numerical computer calculation, a triangular-shaped potential barrier is inferred for those interfacial layers having an RCA-clean surface treatment. It is conjectured that the triangular shape is linked to the dopant pile-up at this interfacial layer
Keywords :
bipolar integrated circuits; bipolar transistors; elemental semiconductors; semiconductor device models; silicon; RCA-clean surface treatment; bipolar IC; dopant pile-up; functional dependences; interfacial layers; interfacial resistances; numerical computer calculation; polycrystalline Si; polysilicon-emitter contacts; transistor; triangular-shaped potential barrier; Annealing; Computational modeling; Computer interfaces; Computer simulation; Contact resistance; Electrical resistance measurement; Metal-insulator structures; Predictive models; Surface resistance; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
