Amorphous silicon device simulation by an adapted Gummel method

Author

Kemp, M. ; Tannous, C.G. ; Meunier, M.

Author_Institution

Dept. of Eng. Phys., Ecole Polytechnique de Montreal, Que., Canada

Volume

35

Issue

9

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

1510

Lastpage

1513

Abstract

The operation of hydrogenated amorphous silicon devices depends crucially on the interplay between the dynamics of free and trapped carriers. This is due to a density of acceptor and donor states present in the mobility gap of amorphous materials. It is shown that Gummel´s method used for the simulation of crystalline-material-based devices has to be modified to account for this interplay. The midgap density of states is identified as the parameter controlling the nature of the dynamics of the carriers and this is illustrated with two examples: the 1D Schottky diode and the 2D static induction transistor

Keywords

amorphous semiconductors; electronic density of states; elemental semiconductors; hydrogen; semiconductor device models; silicon; 1D Schottky diode; 2D static induction transistor; Si:H; acceptor states density; adapted Gummel method; amorphous semiconductor; device simulation; donor states density; free carriers; midgap density of states; mobility gap; modelling; trapped carriers; Amorphous silicon; Charge carrier processes; Crystallization; Difference equations; Electron traps; Electrostatics; Iterative algorithms; Poisson equations; Schottky diodes; Semiconductor devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2584

Filename

2584