Title :
Amorphous silicon device simulation by an adapted Gummel method
Author :
Kemp, M. ; Tannous, C.G. ; Meunier, M.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytechnique de Montreal, Que., Canada
fDate :
9/1/1988 12:00:00 AM
Abstract :
The operation of hydrogenated amorphous silicon devices depends crucially on the interplay between the dynamics of free and trapped carriers. This is due to a density of acceptor and donor states present in the mobility gap of amorphous materials. It is shown that Gummel´s method used for the simulation of crystalline-material-based devices has to be modified to account for this interplay. The midgap density of states is identified as the parameter controlling the nature of the dynamics of the carriers and this is illustrated with two examples: the 1D Schottky diode and the 2D static induction transistor
Keywords :
amorphous semiconductors; electronic density of states; elemental semiconductors; hydrogen; semiconductor device models; silicon; 1D Schottky diode; 2D static induction transistor; Si:H; acceptor states density; adapted Gummel method; amorphous semiconductor; device simulation; donor states density; free carriers; midgap density of states; mobility gap; modelling; trapped carriers; Amorphous silicon; Charge carrier processes; Crystallization; Difference equations; Electron traps; Electrostatics; Iterative algorithms; Poisson equations; Schottky diodes; Semiconductor devices;
Journal_Title :
Electron Devices, IEEE Transactions on
