Title :
Approximation of the electron emission integral [semiconductor devices]
Author_Institution :
Dept. of Math. Sci., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
Recent research has focused on the mathematical formulation of charge-carrier emission over energy barriers in semiconductor devices. The description of this process includes an improper integral that cannot be evaluated explicitly. Approximate representations based on the Gauss-Laguerre quadrature are proposed for high accuracy over the physical range of interest. These approximations are formulated and their accuracy quantified
Keywords :
electron emission; function approximation; integral equations; semiconductor device models; Gauss-Laguerre quadrature; approximations; charge-carrier emission; electron emission integral; energy barriers; improper integral; semiconductor devices; Charge carrier processes; Charge carriers; Electron emission; Energy barrier; FETs; Gaussian approximation; MOSFET circuits; Physics; Semiconductor devices; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
