DocumentCode
1016756
Title
Approximation of the electron emission integral [semiconductor devices]
Author
Pimbley, J.M.
Author_Institution
Dept. of Math. Sci., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
35
Issue
9
fYear
1988
fDate
9/1/1988 12:00:00 AM
Firstpage
1551
Lastpage
1553
Abstract
Recent research has focused on the mathematical formulation of charge-carrier emission over energy barriers in semiconductor devices. The description of this process includes an improper integral that cannot be evaluated explicitly. Approximate representations based on the Gauss-Laguerre quadrature are proposed for high accuracy over the physical range of interest. These approximations are formulated and their accuracy quantified
Keywords
electron emission; function approximation; integral equations; semiconductor device models; Gauss-Laguerre quadrature; approximations; charge-carrier emission; electron emission integral; energy barriers; improper integral; semiconductor devices; Charge carrier processes; Charge carriers; Electron emission; Energy barrier; FETs; Gaussian approximation; MOSFET circuits; Physics; Semiconductor devices; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2589
Filename
2589
Link To Document