Title :
Thermal analysis of ESD-related hot spots [integrated circuits]
Author :
Krieger, Gadi ; Einziger, Pinhas D.
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
The thermal response to a microscopic hot spot, formed by an exponential electrostatic discharge (ESD) pulse, is analyzed and discussed, using a spherically symmetric Gaussian distribution to model the hot spot. A nonsingular solution to the three-dimensional heat equation, applicable to input protection devices in integrated circuits, is obtained. The resulting near-field temperature distribution can be used to study failures related to local silicon melting
Keywords :
discharges (electric); electrostatics; field effect integrated circuits; modelling; protection; temperature distribution; thermal analysis; CMOS; ESD pulse; ESD-related hot spots; MOS IC; exponential electrostatic discharge; failures; input protection devices; integrated circuits; local Si melting; microscopic hot spot; model; near-field temperature distribution; nonsingular solution; spherically symmetric Gaussian distribution; thermal response; three-dimensional heat equation; Electrostatic discharge; Feedback; Leakage current; Poisson equations; Protection; Resistance heating; Silicon; Temperature; Thermal conductivity; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
