An insightful analysis of the hybrid insulated-gate bipolar transistor

Author

Fossum, Jerry G. ; McDonald, Robert J.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

35

Issue

9

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

1560

Lastpage

1562

Abstract

The shorted-anode or hybrid insulated-gate bipolar transistor (HIGBT) is examined theoretically (using a first-order analysis) and experimentally (using specially designed test structures) to give physical insight regarding the unique electrical properties of this power switching device. Basic differences between the HIGBT and the conventional lateral IGBT reflected by measurements of on-state conductance, transient turn-off time, and latchup current are explained and shown to be critically dependent on the structural geometry of the device. Also, a previously unacknowledged mode of operation of the HIGBT is demonstrated

Keywords

bipolar transistors; power transistors; semiconductor switches; HIGBT; first-order analysis; hybrid insulated-gate bipolar transistor; latchup current; on-state conductance; power switching device; shorted-anode; structural geometry; transient turn-off time; Anodes; Bipolar transistors; Conductivity; Current measurement; Dielectrics and electrical insulation; Geometry; Insulated gate bipolar transistors; Testing; Time measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2593

Filename

2593