Title :
An insightful analysis of the hybrid insulated-gate bipolar transistor
Author :
Fossum, Jerry G. ; McDonald, Robert J.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
The shorted-anode or hybrid insulated-gate bipolar transistor (HIGBT) is examined theoretically (using a first-order analysis) and experimentally (using specially designed test structures) to give physical insight regarding the unique electrical properties of this power switching device. Basic differences between the HIGBT and the conventional lateral IGBT reflected by measurements of on-state conductance, transient turn-off time, and latchup current are explained and shown to be critically dependent on the structural geometry of the device. Also, a previously unacknowledged mode of operation of the HIGBT is demonstrated
Keywords :
bipolar transistors; power transistors; semiconductor switches; HIGBT; first-order analysis; hybrid insulated-gate bipolar transistor; latchup current; on-state conductance; power switching device; shorted-anode; structural geometry; transient turn-off time; Anodes; Bipolar transistors; Conductivity; Current measurement; Dielectrics and electrical insulation; Geometry; Insulated gate bipolar transistors; Testing; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
