• DocumentCode
    1016845
  • Title

    The effect of channel boron implants on electron mobility in NMOSFET´s

  • Author

    Aslam, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA
  • Volume
    35
  • Issue
    9
  • fYear
    1988
  • fDate
    9/1/1988 12:00:00 AM
  • Firstpage
    1563
  • Lastpage
    1564
  • Abstract
    The Hall mobilities and Hall concentrations of channel electrons in boron-implanted NMOSFETs were measured at 77 and 300 K. At both temperatures, the mobilities were found to decrease with increasing implantation dose (1011-1012 cm-2) only for electron concentrations <2×1012 cm-2, the effect being more pronounced at 77 K. It is suggested that the mobility degradation is mainly due to impurity scattering
  • Keywords
    Hall effect; boron; carrier mobility; elemental semiconductors; impurity scattering; insulated gate field effect transistors; ion implantation; semiconductor doping; silicon; 300 K; 77 K; B channel implants; Hall concentrations; Hall mobilities; MOSFET; NMOSFETs; Si:B; channel electrons; electron mobility; implantation dose; impurity scattering; mobility degradation; n-channel device; semiconductors; Annealing; Boron; Degradation; Electron mobility; Hall effect; Implants; Impurities; MOSFET circuits; Scattering; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2594
  • Filename
    2594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1016845