Title :
Anisotropic two-photon transitions in GaAs/AlGaAs multiple quantum well waveguides
Author :
Yang, C.C. ; Villeneuve, A. ; Stegeman, G.I. ; Cheng-Hui Lin ; Hao-Hsiung Lin
Author_Institution :
Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The two-photon absorption coefficient and induced nonlinear refractive index in both TE and TM modes of GaAs/AlGaAs multiple-quantum-well (MQW) strip-loaded channel waveguides are measured in the wavelength range from 1490 nm to 1660 nm. The two-photon absorption coefficient ranges from almost zero to 12 cm/GW, and the nonlinear refractive index is always on the order of 10-13 cm 2/W in the wavelength window investigated. Strong nonlinear anisotropy is observed. The values of the two-photon absorption coefficient are obtained by calibrating the inverse transmission measurements. Those of the nonlinear refractive index are obtained by monitoring the signal spectrum broadening due to self-phase modulation. The wavelength dependences of the measured two-photon absorption coefficient and nonlinear refractive index are reasonably consistent with the theoretical predictions
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; nonlinear optics; optical constants; optical waveguides; refractive index; semiconductor quantum wells; two-photon processes; 1490 to 1660 nm; GaAs-AlGaAs; GaAs/AlGaAs multiple quantum well waveguides; MQW; TE modes; TM modes; anisotropic two-photon transitions; calibration; induced nonlinear refractive index; inverse transmission measurements; nonlinear refractive index; self-phase modulation; signal spectrum broadening; strip-loaded channel waveguides; strong nonlinear anisotropy; two-photon absorption coefficient; wavelength dependences; Absorption; Anisotropic magnetoresistance; Excitons; Gallium arsenide; Optical polarization; Optical refraction; Quantum well devices; Tellurium; Waveguide transitions; Wavelength measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
