Title :
Reduction of noise figure in semiconductor laser amplifiers with Ga 1-xInxAs/GaInAsP/InP strained quantum well structures
Author :
Huang, Yidong ; Komori, Kazuhiro ; Arai, Shigehisa
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
12/1/1993 12:00:00 AM
Abstract :
The noise characteristics of semiconductor laser amplifiers (SLAs) in the Ga1-xInxAs/GaInAsP/InP strained quantum well (QW) system are theoretically calculated and analyzed using density-matrix theory and taking into account the effects of band mixing on both the valence subbands and the transition dipole moments. The numerical results show that a reduced noise figure can be obtained in both tensile and compressively strained QW structures due to the increase in differential gain and the decrease in transparent carrier density. From a comparison among compressively strained (x=0.70), unstrained (x=0.53), and tensile strained (x=0.40) QW SLAs at a fixed carrier density and optical confinement factor, it is found that the noise figure of the tensile strained QW reaches its lowest value of 3.4 dB at average input optical power of -20 dB
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser theory; semiconductor device noise; semiconductor lasers; valence bands; 3.4 dB; Ga1-xInxAs/GaInAsP/InP strained quantum well structures; GaInAs-GaInAsP-InP; band mixing; compressively strained QW structures; density-matrix theory; differential gain; fixed carrier density; noise characteristics; noise figure reduction; optical confinement factor; reduced noise figure; semiconductor laser amplifiers; tensile strained QW structures; transition dipole moments; transparent carrier density; unstrained SLA; valence subbands; Charge carrier density; Laser noise; Laser theory; Noise figure; Noise reduction; Optical mixing; Optical noise; Quantum well lasers; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Quantum Electronics, IEEE Journal of
