Title :
Design and characterization of In0.2Ga0.8As MQW vertical-cavity surface-emitting lasers
Author :
Geels, R.S. ; Thibeault, B.J. ; Corzine, S.W. ; Scott, J.W. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The device design, material characterization, and performance of optimized vertical-cavity surface-emitting lasers (VCSELs) are presented. The basic design goal was to increase the output power of the lasers without greatly increasing the low threshold current reported in earlier devices. The material characterization was performed by measuring in-plane lasers and broad-area VCSELs made from the same material as the small VCSELs. For 10-μm-square devices, outputs over 3 mW, device operation over 100°C, 6% wall-plug efficiency, threshold voltages under 3 V, and threshold currents under mA are reported
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical design techniques; semiconductor lasers; 100 C; 2 mA; 3 V; 3 mW; 6 percent; In0.2Ga0.8As; In0.2Ga0.8As MQW vertical-cavity surface-emitting lasers; broad-area VCSELs; design goal; device operation; in-plane lasers; laser design; low threshold current; material characterization; output power; threshold currents; threshold voltages; wall-plug efficiency; Design optimization; Optical design; Optical materials; Performance evaluation; Power generation; Power lasers; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
