DocumentCode
1017076
Title
Influence of applied tensile and compressive stress on large Barkhausen and Matteucci effects in amorphous wires
Author
Kinoshita, F. ; Malmhäll, R. ; Mohri, K. ; Humphrey, F.B. ; Yamasaki, J.
Author_Institution
Kyushu Institute of Technology, Tobata, Kitakyushu, Japan
Volume
22
Issue
5
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
445
Lastpage
447
Abstract
Investigation for establishing a residual stress distribution and domain model for amorphous magnetostrictive alloy wires were carried out. Therefore, voltage pulse generation due to the large Barkhausen jump (ep ) and the Matteucci effect (ep ´) was studied as a function of tensile and compressive stress applied in the axial direction. The wires had a composition of Fe77.5 Si7.5 B15 , made by the in-water quenching technique. The amplitude of the voltage pulses (ep and ep ´) and domain nucleation field (H*), are found to decrease smoothly to zero at a critical compressive stress of 5 kg/mm2for the as-cast wires. A reduction in the critical stress to 3 kg/mm2is observed after altering the wire diameter from 125 to 95 µm by etching. Tensile stress above 20 kg/mm2was found to increase ep and H*. Squareness ratio (Br /Bs ) is observed to be a continous increasing function of applied stress in the range from compressive, zero to tensile stress, being about 0.5 at zero stress. By reducing the diameter by 50% through etching, Br /Bs is found to increase by about 20%. The observed results is indicating a gradually varying residual stress such that the core has a stress induced axial anisotropy and the outer layers has an anisotropy perpendicular to the axis, caused by positive magnetostriction.
Keywords
Amorphous magnetic materials/devices; Barkhausen effect; Magnetostrictive materials/devices; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Compressive stress; Etching; Magnetostriction; Residual stresses; Tensile stress; Voltage; Wires;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1986.1064402
Filename
1064402
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