Title :
80 GHz silicon diamond-heatsink Impatt diodes
Author :
Ino, M. ; Makimura, Tetsuya ; Ishibashi, Takayuki ; Ohmori, Masato
Author_Institution :
NTT, Electrical Communication Laboratories, Musashino, Japan
Abstract :
80 GHz band silicon d.d.r. Impatt diodes with diamond heatsinks were fabricated. An output power of 1014 mW at 77.70 GHz was obtained by liquid-nitrogen-cooled operation, which gives the highest pf2 product, and 726 mW at 73.35 GHz by room temperature operation. Small-signal diode impedance was calculated considering operating temperature.
Keywords :
IMPATT diodes; 726 mW output power at room temperature; 80 GHz Impatt diodes; DDR Impatt diodes; diamond heatsinks; liquid N2 cooled operation 1 W output power; mm wave Impatt diodes; pf2 product; small signal impedance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790002
