Title :
The saturation characteristics of diffused-base transistors
Author :
Miller, Scott L. ; Soshea, R.W.
Author_Institution :
Rheem Semiconductor Corp., Mountain View, Calif.
Keywords :
Circuits; Conductivity; Contact resistance; Current density; Data systems; Electron emission; Gallium arsenide; Germanium; Immune system; P-i-n diodes; Probability distribution; Protection; Pulse modulation; Semiconductor diodes; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14834
