Title :
X- and Ku-band internally matched packaged GaAs f.e.t.
Author :
Derewonko, H. ; Laviron, M. ; Lepage, J.
Author_Institution :
Thomson-CSF, Département Microélectronique Hyperfréquence, Orsay, France
Abstract :
The design and performances of medium-power X- and Ku-band internally matched GaAs f.e.t.s are reported. With input-output v.s.w.r. lower than 2 : 1 over more than 20% bandwidth in the X-band and l0% in the Ku-band, 50 and 200 mW two-stage cascaded amplifiers have been realised with no matching circuit outside the packaged f.e.t. and with only one power supply.
Keywords :
field effect transistors; gallium arsenide; impedance matching; microwave amplifiers; solid-state microwave devices; GaAs FET; Ku-band; VSWR<2:1; X-band; internally matched packaged FET; microwave amplifiers; performance; two stage cascaded amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790006
