Title :
Distribution of recombination current in emitter-base junctions of silicon transistors
Author :
Coppen, P.J. ; Matzen, W.T.
Author_Institution :
Texas Instruments Inc., Dallas, Tex.
Keywords :
Breakdown voltage; Contracts; Current measurement; Diodes; Electrodes; Energy measurement; Geometry; Impurities; P-n junctions; Pins; Protection; Silicon; Silicon alloys; Switches; Temperature; Testing; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14837
