DocumentCode
1017204
Title
Distribution of recombination current in emitter-base junctions of silicon transistors
Author
Coppen, P.J. ; Matzen, W.T.
Author_Institution
Texas Instruments Inc., Dallas, Tex.
Volume
8
Issue
5
fYear
1961
Firstpage
425
Lastpage
425
Keywords
Breakdown voltage; Contracts; Current measurement; Diodes; Electrodes; Energy measurement; Geometry; Impurities; P-n junctions; Pins; Protection; Silicon; Silicon alloys; Switches; Temperature; Testing; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1961.14837
Filename
1473000
Link To Document