P-channel InGaN-HFET structure based on polarization doping

Author

Zimmermann, T. ; Neuburger, M. ; Kunze, M. ; Daumiller, I. ; Denisenko, A. ; Dadgar, A. ; Krost, A. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany

Volume

25

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

450

Lastpage

452

Abstract

A p-channel GaN-based heterostructure field-effect transistor (HFET) concept based on a two-dimensional hole gas (2DHG) induced by polarization doping is presented. The structure employed is a GaN-InGaN-GaN heterostructure without external acceptor doping. The p-channel 2DHG characteristics are verified by operation at low temperature (20 K) and capacitance-voltage profiling. Hall measurements result in a positive Hall-coefficient and indicate a 2DHG hole mobility of approximately 700 cm²/Vs at 66 K. For an optimum structure supported by extrinsic doping a simulated output current of approximately 100 mA/mm is predicted for a gate length of 0.5 μm.

Keywords

Hall effect; III-V semiconductors; field effect transistors; gallium compounds; hole mobility; semiconductor doping; two-dimensional hole gas; 0.5 micron; 20 K; GaN-InGaN-GaN; Hall measurements; acceptor doping; capacitance-voltage profiling; extrinsic doping; heterostructure field-effect transistor; hole mobility; p-channel; polarization doping; two-dimensional hole gas; Capacitance-voltage characteristics; Current measurement; Doping; HEMTs; Length measurement; MODFETs; Polarization; Predictive models; Temperature; Two dimensional hole gas;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.830285

Filename

1308416