Title :
AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz
Author :
Minko, A. ; Hoel, Virginie ; Morvan, E. ; Grimbert, B. ; Soltani, A. ; Delos, E. ; Ducatteau, D. ; Gaquiere, C. ; Theron, D. ; De Jaeger, J.C. ; Lahreche, H. ; Wedzikowski, L. ; Langer, R. ; Bove, P.
Author_Institution :
Thales Inst. d´Electronique de Microeletronique et de Nanotechnol., Lille Univ., Villeneuve d´Ascq, France
fDate :
7/1/2004 12:00:00 AM
Abstract :
AlGaN-GaN high electron mobility transistors (HEMTs) on silicon substrate are fabricated. The device with a gate length of 0.3-μm and a total gate periphery of 300 μm, exhibits a maximum drain current density of 925 mA/mm at V/sub GS/=0 V and V/sub DS/=5 V with an extrinsic transconductance (g/sub m/) of about 250 mS/mm. At 10 GHz, an output power density of 1.9 W/mm associated to a power-added efficiency of 18% and a linear gain of 16 dB are achieved at a drain bias of 30 V. To our knowledge, these power results represent the highest output power density ever reported at this frequency on GaN HEMT grown on silicon substrates.
Keywords :
III-V semiconductors; aluminium compounds; current density; high electron mobility transistors; silicon; 0.3 micron; 10 GHz; 16 dB; 30 V; AlGaN-GaN; drain current density; extrinsic transconductance; high electron mobility transistors; output power density; silicon substrates; Aluminum gallium nitride; Current density; Frequency; Gain; Gallium nitride; HEMTs; MODFETs; Power generation; Silicon; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.830272
