Title :
Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs
Author :
Rajasingam, S. ; Pomeroy, J.W. ; Kuball, M. ; Uren, M.J. ; Martin, T. ; Herbert, D.C. ; Hilton, K.P. ; Balmer, R.S.
Author_Institution :
H. H. Wills Phys. Lab., Univ. of Bristol, UK
fDate :
7/1/2004 12:00:00 AM
Abstract :
Temperature profiles in the source/drain (S/D) opening of a single finger AlGaN-GaN heterostructure field-effect transistor were studied at increasing S/D voltages by micro-Raman spectroscopy with <1 μm spatial resolution. These profiles imply high field regions near the gate edge of length /spl sim/0.4 μm for S/D voltages between 45 and 75 V. Electric field strengths of /spl sim/1.2 and /spl sim/1.9 MV/cm are estimated for 45 and 75 V S/D voltage. The experimental results are in excellent agreement with 2-D Monte Carlo simulations.
Keywords :
III-V semiconductors; Monte Carlo methods; Raman spectroscopy; aluminium compounds; electric field measurement; field effect transistors; semiconductor device measurement; temperature measurement; 2D Monte Carlo simulations; 45 to 75 V; AlGaN-GaN; S/D voltages; electric field measurement; electric field strengths; finite difference methods; heterostructure field-effect transistor; microRaman spectroscopy; microRaman temperature measurement; spatial resolution; Aluminum gallium nitride; Electric variables measurement; FETs; Gallium nitride; HEMTs; MODFETs; Spatial resolution; Spectroscopy; Temperature measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.830267
