Title :
Effect of ionising radiation on mobile-ion density in m.o.s. oxides
Author :
Bhar, T.N. ; Dat, R. ; Koyama, R.Y. ; Galloway, Kenneth F.
Author_Institution :
Howard University, Department of Electrical Engineering, Washington, USA
Abstract :
Data are presented that indicate that the density of mobile ions in m.o.s. oxides is unaffected by exposure to ionising radiation. The flat-band voltages following irradiation and anneal appear to be correlated with the density of mobile ions.
Keywords :
metal-insulator-semiconductor structures; radiation effects; radiation hardening (electronics); MOS oxides; MOS structures; flat band voltages; ionising radiation; mobile ion density; radiation effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790012
