Title :
Room temperature operation of an in-plane half-adder based on ballistic Y-junctions
Author :
Reitzenstein, S. ; Worschech, L. ; Forchel, A.
Author_Institution :
Univ. Wurzburg, Germany
fDate :
7/1/2004 12:00:00 AM
Abstract :
We have realized an in-plane half-adder (HA) structure based on monolithically interconnected GaAs-AlGaAs Y-branched nanojunctions. A self-switching effect of the junction from an internal gating regime to a regime dominated by the ballistic injection of electrons from different terminals is observed at room temperature and exploited to demonstrate HA operation.
Keywords :
III-V semiconductors; adders; aluminium compounds; semiconductor junctions; GaAs-AlGaAs; ballistic Y-junctions; ballistic electron injection; half-adder; internal gating regime; nanojunctions; room temperature; self-switching effect; Electrons; Fabrication; Helium; Integrated circuit interconnections; Logic circuits; Logic devices; Nanostructures; Temperature; Threshold voltage; Transistors; Ballistic; HA; Y-branch; half-adder; self-switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.831225
