Title :
Solubility and diffusion of copper in extrinsic gallium arsenide
Author :
Hall, R.N. ; Racette, J.H.
Author_Institution :
General Electric Res. Lab., Schenectady, N. Y.
Keywords :
Charge carrier processes; Copper; Forward contracts; Gallium arsenide; III-V semiconductor materials; Impurities; Magnetic devices; Magnetic materials; Magnetic semiconductors; Magnetic separation; Semiconductor diodes; Semiconductor impurities; Semiconductor materials; Temperature dependence; Tunneling; Zinc;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14844
