DocumentCode :
1017307
Title :
The degradation of GaAs tunnel diodes
Author :
Weisberg, L.R.
Volume :
8
Issue :
5
fYear :
1961
Firstpage :
428
Lastpage :
428
Keywords :
Conducting materials; Degradation; Diodes; Equations; Gallium arsenide; Gold; Ionization; Radiative recombination; Semiconductor diodes; Semiconductor impurities; Semiconductor process modeling; Silicon; Solids; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1961.14848
Filename :
1473011
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1017307
