Influences of /spl delta/-doping position on the characteristics of SiGe-Si DCFETs

Author

San Lein Wu ; Pei Wei Chien ; Shoou Jinn Chang ; Koh, S. ; Shiraki, Y.

Author_Institution

Dept. of Electron. Eng., Cheng Shiu Univ., Kaohsiung, Taiwan

Volume

25

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

477

Lastpage

479

Abstract

SiGe-Si doped channel field-effect-transistors with different positions of /spl delta/ layers in SiGe wells have been proposed and fabricated. High forward gate to drain turn-on voltage (>0.87 V) and reverse breakdown voltage up to 25 V was obtained for center and bottom /spl delta/-doped channel devices. For device structures with the same 1×100 μm² gate, center /spl delta/-doped channel device display the best dc maximum extrinsic transconductance of 22.1 mS/mm. Compared with conventional Si-SiGe MODFETs, center /spl delta/-doped channel device exhibits improved gate voltage swings as wide as 3 V due to the better carrier confinement and the absence of parallel conduction, which is promising to provide an additional degree of freedom for Si-based device applications.

Keywords

field effect transistors; semiconductor device breakdown; semiconductor doping; semiconductor quantum wells; silicon compounds; MODFET; SiGe-Si; delta doping; doped channel field-effect-transistors; drain turn-on voltage; extrinsic transconductance; gate voltage swings; parallel conduction; reverse breakdown voltage; Carrier confinement; FETs; Germanium silicon alloys; HEMTs; Impurities; MODFETs; Power generation; Silicon germanium; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.830266

Filename

1308425