Title :
Impurity induced pipes through diffused layers
Author_Institution :
Stanford Industrial Park, Palo Alto, Calif.
Keywords :
Alloying; Boron; Conducting materials; Dielectric substrates; Doping; Grain boundaries; Impurities; Oxidation; Semiconductor diodes; Semiconductor process modeling; Shape; Silicon; Solid state circuits; Surface contamination; Temperature; Thermal conductivity;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14851
