Title :
Surface passivation of silicon devices
Author_Institution :
General Instrument Corp., Hicksville, N. Y.
Keywords :
Boron; Chemicals; Conducting materials; Doping; Geometry; Grain boundaries; Impurities; Instruments; Oxidation; Passivation; Seals; Semiconductor process modeling; Shape; Silicon devices; Solid state circuits; Surface contamination; Thermal conductivity;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14852
