• DocumentCode
    1017352
  • Title

    Surface passivation of silicon devices

  • Author

    Li, C.H.

  • Author_Institution
    General Instrument Corp., Hicksville, N. Y.
  • Volume
    8
  • Issue
    5
  • fYear
    1961
  • Firstpage
    429
  • Lastpage
    429
  • Keywords
    Boron; Chemicals; Conducting materials; Doping; Geometry; Grain boundaries; Impurities; Instruments; Oxidation; Passivation; Seals; Semiconductor process modeling; Shape; Silicon devices; Solid state circuits; Surface contamination; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1961.14852
  • Filename
    1473015
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017352