Title :
Diffused three-layer structures along small-angle grain boundaries in silicon
Author_Institution :
Shockley Transistor, Palo Alto, Calif.
Keywords :
Boron; Conducting materials; Contracts; Doping; Grain boundaries; Impurities; Oxidation; Passivation; Plastics; Seals; Semiconductor process modeling; Shape; Silicon; Solid state circuits; Surface contamination; Thermal conductivity;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14853
