DocumentCode :
1017431
Title :
New diffusion-type stripe-geometry injection laser
Author :
Marschall, P. ; Schlosser, E. ; W¿¿lk, C.
Author_Institution :
AEG-Telefunken, Forschungsinstitut, Ulm, West Germany
Volume :
15
Issue :
1
fYear :
1979
Firstpage :
38
Lastpage :
39
Abstract :
The device structure, fabrication process and properties of a new diffusion-type stripe-geometry injection laser are described. A V-groove etched into the laser surface determines the shape of the diffusion front and defines the stripe width. This V-groove laser operates stably in the fundamental transverse mode and exhibits linear kink-free light/current characteristics up to 25 mW per mirror.
Keywords :
gallium arsenide; semiconductor junction lasers; 25 mW per mirror; V-groove laser; device structure; diffusion type stripe geometry injection laser; fabrication; linear kinkfree light/current characteristic; optical fibre light sources; properties; stable fundamental transverse mode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19790028
Filename :
4255991
Link To Document :
بازگشت