Title :
Analysis of phase distribution in phase-change nonvolatile memories
Author :
Ielmini, Daniele ; Lacaita, Andrea L. ; Pirovano, Agostino ; Pellizzer, Fabio ; Bez, Roberto
Author_Institution :
Diputimento di Elettronica e Informazione, Politecnico di Milano, Milan, Italy
fDate :
7/1/2004 12:00:00 AM
Abstract :
The phase transformation in chalcogenide-based nonvolatile memories is studied by cell electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by applying electrical pulses, then the cell resistance R and the current-voltage characteristics are measured. From the analysis of the electrical parameters of the cell, we provide evidence for a stacked-like phase distribution in the active layer. Results are discussed with reference to the thermal profile during the program pulse in the chalcogenide layer.
Keywords :
electric current measurement; electric resistance measurement; phase changing circuits; semiconductor storage; voltage measurement; PCM; amorphous semiconductors; chalcogenide layer; crystal growth; current-voltage characteristics; nonvolatile memories; phase-change memory; thermal profile; Amorphous materials; Crystallization; Current measurement; Electric resistance; Electrical resistance measurement; Glass; Nonvolatile memory; Phase change materials; Pulse measurements; Voltage; Amorphous semiconductors; PCM; chalcogenide; crystal growth; nonvolatile memories; phase-change memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.831219
