Analysis of phase distribution in phase-change nonvolatile memories

Author

Ielmini, Daniele ; Lacaita, Andrea L. ; Pirovano, Agostino ; Pellizzer, Fabio ; Bez, Roberto

Author_Institution

Diputimento di Elettronica e Informazione, Politecnico di Milano, Milan, Italy

Volume

25

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

507

Lastpage

509

Abstract

The phase transformation in chalcogenide-based nonvolatile memories is studied by cell electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by applying electrical pulses, then the cell resistance R and the current-voltage characteristics are measured. From the analysis of the electrical parameters of the cell, we provide evidence for a stacked-like phase distribution in the active layer. Results are discussed with reference to the thermal profile during the program pulse in the chalcogenide layer.

Keywords

electric current measurement; electric resistance measurement; phase changing circuits; semiconductor storage; voltage measurement; PCM; amorphous semiconductors; chalcogenide layer; crystal growth; current-voltage characteristics; nonvolatile memories; phase-change memory; thermal profile; Amorphous materials; Crystallization; Current measurement; Electric resistance; Electrical resistance measurement; Glass; Nonvolatile memory; Phase change materials; Pulse measurements; Voltage; Amorphous semiconductors; PCM; chalcogenide; crystal growth; nonvolatile memories; phase-change memory;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.831219

Filename

1308435