DocumentCode :
1017450
Title :
Super-saturated transistor switches
Author :
Gibbons, James F.
Author_Institution :
Stanford University, Stanford, Calif.
Volume :
8
Issue :
6
fYear :
1961
Firstpage :
443
Lastpage :
452
Abstract :
The purpose of this paper is to calculate the voltage drop across a closed transistor switch in the presence of intermediate-level operating conditions. The problem is formulated to include the important one-dimensional effects associated with intermediate-level operation in such a way that the low-level theory is included as a special case. Experimental verification of the theory has been obtained over a moderately wide range of base drives.
Keywords :
Choppers; Doping; Electron devices; Equivalent circuits; Estimation theory; Impedance; Neodymium; Nonlinear equations; Size measurement; Switches; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1961.14861
Filename :
1473024
Link To Document :
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