Title :
Electron-beam annealing of ion-implanted silicon
Author :
McMahon, Richard A. ; Ahmed, Hameeza
Author_Institution :
Cambridge University, Engineering Department, Cambridge, UK
Abstract :
A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure.
Keywords :
annealing; electron beam applications; ion implantation; silicon; electron beam annealing; ion implanted Si; scanning electron beam zapping system;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790032
