Title :
Effective thermal conductivity of porous solder layers
Author :
Pritchard, Leonard S. ; Acarnley, Paul P. ; Johnson, C. Mark
Author_Institution :
Dept. of Electr. Electron. & Comput. Eng., Univ. of Newcastle upon Tyne, UK
fDate :
6/1/2004 12:00:00 AM
Abstract :
Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their overall thermal transfer performance. This paper presents analytical results of the effect of spherical and spheroidal void geometries on the thermal conductivity of bulk media. Analytical results are compared with axially symmetric and three-dimensional thermal simulations of single and multiple cavity defects in planar structures. The effective thermal conductivity of the die to the case attachment solder layer of two commercial metal oxide semiconductor field effect transistor (MOSFET) devices is estimated using these results, with cavity dimensions and distributions obtained by electron microscopy.
Keywords :
MOSFET; electron microscopy; finite element analysis; power semiconductor devices; semiconductor device packaging; soldering; thermal conductivity; voids (solid); MOSFET devices; bulk media; case attachment solder layer; electron microscopy; finite element simulation; metal oxide semiconductor field effect transistor; microscopic voids; multiple cavity defects; planar structures; porous solder layers; power semiconductor devices; spherical void geometries; spheroidal void geometries; thermal conductivity; thermal simulations; thermal transfer performance; Analytical models; Electron microscopy; Finite element methods; Geometry; MOSFET circuits; Packaging; Power MOSFET; Power semiconductor devices; Thermal conductivity; Thermal resistance; Analytical model; MOSFET; die attach; finite element simulation; packaging; power semiconductor; solder layers; thermal conductivity; voids;
Journal_Title :
Components and Packaging Technologies, IEEE Transactions on
DOI :
10.1109/TCAPT.2004.828584
