Title :
Chemical sensing with ZnO nanowire field-effect transistor
Author :
Fan, Zhiyong ; Lu, Jia G.
Author_Institution :
Dept. of Chem. Eng. & Mater. Sci., California Univ., Irvine, CA
fDate :
7/1/2006 12:00:00 AM
Abstract :
Zinc oxide nanowires are configured as n-channel FETs. These transistors are implemented as chemical sensors for detection of various chemical gases. It is observed that the nanowire conductance is reduced when it is exposed to oxygen, nitrogen dioxide, ammonia gases at room temperature. Its ammonia sensing behavior is observed to switch from oxidizing to reducing when temperature is increased to 500 K. This effect is mainly attributed to the temperature dependent Fermi level shift. In addition, carbon monoxide is found to increase the nanowire conductance in the presence of oxygen. Furthermore, the detection sensitivity dependence on the nanowire radius is presented
Keywords :
Fermi level; II-VI semiconductors; chemical sensors; electric admittance; field effect transistors; nanowires; wide band gap semiconductors; zinc compounds; 293 to 298 K; Fermi level shift; ZnO; ammonia gas; carbon monoxide; chemical gases; chemical sensors; n-channel FET; nanowire conductance; nanowire field-effect transistor; nitrogen dioxide gas; oxygen gas; zinc oxide nanowires; Argon; Chemical sensors; FETs; Gases; Monitoring; Nanoscale devices; Switches; Temperature dependence; Temperature sensors; Zinc oxide; Field-effect transistor (FET); nanotechnology; semiconductor device; semiconductor–metal interface; sensitivity;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2006.877428
