Title :
Anomalous temperature variation of the thermal resistivity of GaAs IMPATT diodes
Author :
Bailey, Michael J.
Author_Institution :
Varian III-V Device Center, Santa Clara, CA, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
The thermal resistivity of GaAs IMPATT diodes was measured from 100-325°C and showed an unexpected 10% decrease, in contrast with the behavior of GaAs MESFET devices, whose resistivity increases as much as 30% over the same temperature range. The most likely explanation of this unusual effect is the dominance of charged impurity scattering in a degenerately doped GaAs contact layer. This may be expected to occur in other devices where heat flow crosses highly doped regions
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; impurity scattering; thermal conductivity of solids; 100 to 325 degC; GaAs; IMPATT diodes; charged impurity scattering; degenerately doped GaAs contact layer; heat flow; highly doped regions; semiconductors; solid state microwave devices; thermal resistivity; Conductivity; Gallium arsenide; Integral equations; Neodymium; P-n junctions; Physics; Semiconductor devices; Semiconductor diodes; Temperature; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
