DocumentCode :
1017813
Title :
Comparison of semiconductor transport models using a Monte Carlo consistency test
Author :
Ramaswamy, Srini ; Tang, Tmg-wei
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume :
41
Issue :
1
fYear :
1994
fDate :
1/1/1994 12:00:00 AM
Firstpage :
76
Lastpage :
83
Abstract :
This paper proposes a scheme to compare different transport models which are used to simulate submicron semiconductor devices. The procedure requires self-consistent Monte Carlo simulation data for a particular test device. We have compared four different hydrodynamic transport models which have been proposed recently. All four sets of hydrodynamic equations can be cast into a single form by selecting appropriate models for various transport parameters. The advantage is that we can use the same discretized set of equations to implement different transport models. We have also compared the results obtained from the Monte Carlo consistency test with those obtained by the hydrodynamic equation solver. The consistency test has been used to highlight the merits and demerits of the transport models on a common platform
Keywords :
Boltzmann equation; Monte Carlo methods; semiconductor device models; Monte Carlo consistency test; discretized equation set; energy flow profiles; hydrodynamic transport models; self-consistent Monte Carlo simulation data; semiconductor transport models; submicron semiconductor device simulation; velocity profiles; Automatic testing; Conductors; Differential equations; High definition video; Hydrodynamics; Monte Carlo methods; Poisson equations; Semiconductor device testing; Senior members; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.259623
Filename :
259623
Link To Document :
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