Title :
Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET´s as a function of temperature
Author :
Balestra, F. ; Jomaah, J. ; Ghibaudo, G. ; Faynot, O. ; Auberton-Herve, A.J. ; Giffard, B.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
1/1/1994 12:00:00 AM
Abstract :
A study of the latch and breakdown phenomena in thin film N- and P-channel SOI MOSFET´s is performed as a function of temperature. For P-type MOSFET´s, for which no investigation of the parasitic bipolar transistor has been carried out, we show that latch problems are observed in the subhalf-micrometer range, while this feature is emphasized in the micrometer range for N-channel transistors. In addition, it is demonstrated by theoretical considerations and experimental results that these parasitic effects are strongly reduced at liquid nitrogen temperature and vanish almost entirely at liquid helium temperature. Similar improvements are obtained at low temperature in both N and P-channel SIMOX MOSFET´s
Keywords :
SIMOX; insulated gate field effect transistors; 300 K; 4.2 K; 77 K; N channel; P channel; SIMOX MOSFET; Si-SiO2; breakdown phenomena; latch phenomena; liquid helium temperature; liquid nitrogen temperature; low temperature; micrometer range; parasitic bipolar transistor; subhalf-micrometer range; temperature dependence; thin film SOI MOSFET; Bipolar transistors; Electric breakdown; Helium; MOSFET circuits; Nitrogen; Semiconductor thin films; Temperature; Thin film devices; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
