Title :
Pulsed GaAs f.e.t. operation for high peak output powers
Author :
Wade, P.C. ; Rutkowski, D. ; Drukier, I.
Author_Institution :
Microwave Semiconductor Corporation, Somerset, USA
Abstract :
Significant increases in GaAs f.e.t. X-band power output are made possible by pulsed operation, using pulse durations sufficiently short that thermal limitations are alleviated. Significantly higher-voltage operation is also possible under these conditions, with further improvement in power output and gain. As much as 5.9 W of peak power output has been obtained at 8 GHz from a device capable of 2.5 W c.w. output at 6 GHz.
Keywords :
field effect transistors; power transistors; solid-state microwave devices; GaAs FET; X-band; gain; high peak power output; pulsed operation; thermal limitations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790425
