Title :
A parameter extraction method using cutoff measurement for a large-scale HSPICE model of HBT´s
Author :
Lee, Seonghearn ; Kang, Sang Wong
Author_Institution :
Semicond. Dev. Res. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
1/1/1994 12:00:00 AM
Abstract :
We present an accurate parameter extraction method for the HBT large-signal equivalent circuit model in which several extrinsic parasitics are connected to HSPICE BJT model. The measured Gummel plot are used to extract DC model parameters of HBT using HSPICE. Capacitances are then obtained from S-parameter measurements of the HBTs biased to cutoff. The other parameters are determined from the active device S-parameters. The large-signal modeled Gummel plot and S-parameters show good agreement with the measured ones, respectively
Keywords :
S-parameters; SPICE; capacitance; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; DC model parameters; Gummel plot; HBT; HSPICE BJT model; S-parameter measurements; accurate parameter extraction method; capacitance; cutoff; cutoff measurement; extrinsic parasitics; large-scale HSPICE model; large-signal equivalent circuit model; large-signal model; Application specific integrated circuits; Circuit simulation; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Large-scale systems; Parameter extraction; Parasitic capacitance; Scattering parameters;
Journal_Title :
Electron Devices, IEEE Transactions on
