A parameter extraction method using cutoff measurement for a large-scale HSPICE model of HBT´s

Author

Lee, Seonghearn ; Kang, Sang Wong

Author_Institution

Semicond. Dev. Res. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

41

Issue

1

fYear

1994

fDate

1/1/1994 12:00:00 AM

Firstpage

112

Lastpage

114

Abstract

We present an accurate parameter extraction method for the HBT large-signal equivalent circuit model in which several extrinsic parasitics are connected to HSPICE BJT model. The measured Gummel plot are used to extract DC model parameters of HBT using HSPICE. Capacitances are then obtained from S-parameter measurements of the HBTs biased to cutoff. The other parameters are determined from the active device S-parameters. The large-signal modeled Gummel plot and S-parameters show good agreement with the measured ones, respectively

Keywords

S-parameters; SPICE; capacitance; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; DC model parameters; Gummel plot; HBT; HSPICE BJT model; S-parameter measurements; accurate parameter extraction method; capacitance; cutoff; cutoff measurement; extrinsic parasitics; large-scale HSPICE model; large-signal equivalent circuit model; large-signal model; Application specific integrated circuits; Circuit simulation; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Large-scale systems; Parameter extraction; Parasitic capacitance; Scattering parameters;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.259628

Filename

259628