Title :
Modulation characteristics of 1.3 μm buried-stripe InGaAsP laser up to 2 Gbit/s data rates
Author :
Yamada, Jun-Ichi ; Machida, Susumu ; Mukai, Takaaki ; Kano, Hiroyuki ; Sugiyama, Koichi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Modulation experimenting on a buried-stripe (b.s.) InGaAsP laser emitting at 1.3 μm was carried out up to 2 Gbit/s. The b.s. laser is free from relaxation oscillation, which degrades modulated optical pube waveforms, especially at high data rates. The repeater gain of 1.6 Gbit/s transmission systems is improved by 9 dB compared with previously reported experiments. Modulation characteristics up to 2 Gbit/s are reported.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical communication equipment; optical modulation; semiconductor junction lasers; InGaAsP laser; buried stripe semiconductor function laser; modulated optical pulse waveforms; modulation characteristics; optical communication equipment; optical fibres; relaxation oscillation; transmission systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790428
