Title :
A transistor utilizing an epitaxially grown base and collector region
Keywords :
Capacitance; Circuits; Copper; Diodes; Fabrication; Frequency; Geometry; Germanium; Inductance; Instruments; Laboratories; Material storage; Silicon; Strips; Switching circuits; Telephony;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.14904
