DocumentCode
1017910
Title
Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement
Author
Amann, M.-C. ; Proebster, W.
Author_Institution
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Electronik, Mÿnchen, West Germany
Volume
15
Issue
19
fYear
1979
Firstpage
599
Lastpage
600
Abstract
A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p=3×1018 cm¿3 exhibit external quantum efficiency of 1% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (=7.0 kA/cm2).
Keywords
light emitting diodes; optical communication equipment; GaAs-GaAlAs heterostructure; LED; active region doping; current confinement; quantum efficiency; second harmonic distortion;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790430
Filename
4256038
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