Title :
Design of a high-frequency transistor with star geometry
Author :
Huffman, T.R. ; Muschinske, J.E. ; Robin, P.T.
Keywords :
Capacitance; Diodes; Fabrication; Frequency; Geometry; Germanium; Instruments; Leakage current; Material storage; Power amplifiers; Radiofrequency amplifiers; Silicon; Stability; Switching circuits;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.14906
