Title :
On-resistance of V-v.m.o.s. power transistors
Author :
Lane, W.A. ; Salama, C.A.T. ; Dmitrevsky, S.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
An expression for the on-resistance of a V-groove vertical-channel m.o.s. (V-v.m.o.s.) transistor is presented. The expression relates the on-resistance to the geometry and resistivity of the drain drift region and is useful in optimising the drift region parameters for minimum on-resistance and maximum drain-source breakdown.
Keywords :
insulated gate field effect transistors; power transistors; V groove vertical channel MOS; drain; drain source breakdown; drift region; on resistance; power transistors; resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790432
