• DocumentCode
    1017929
  • Title

    On-resistance of V-v.m.o.s. power transistors

  • Author

    Lane, W.A. ; Salama, C.A.T. ; Dmitrevsky, S.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    15
  • Issue
    19
  • fYear
    1979
  • Firstpage
    601
  • Lastpage
    602
  • Abstract
    An expression for the on-resistance of a V-groove vertical-channel m.o.s. (V-v.m.o.s.) transistor is presented. The expression relates the on-resistance to the geometry and resistivity of the drain drift region and is useful in optimising the drift region parameters for minimum on-resistance and maximum drain-source breakdown.
  • Keywords
    insulated gate field effect transistors; power transistors; V groove vertical channel MOS; drain; drain source breakdown; drift region; on resistance; power transistors; resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790432
  • Filename
    4256040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017929