• DocumentCode
    1017939
  • Title

    An n-p-n germanium double-diffused mesa transistor

  • Author

    Jacobs, R.A. ; Abshire, R.H. ; Wilson, Robert W. ; Anetsmann, H.

  • Author_Institution
    Motorola, Inc., Phoenix, Ariz.
  • Volume
    9
  • Issue
    1
  • fYear
    1962
  • Firstpage
    110
  • Lastpage
    110
  • Keywords
    Capacitance; Diodes; Fabrication; Frequency; Geometry; Germanium; Instruments; Jacobian matrices; Material storage; Ohmic contacts; Passivation; Poles and towers; Silicon; Switching circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.14907
  • Filename
    1473135