2–8 GHz 8-W Power Amplifier MMIC Developed Using MSAG MESFET Technology

Author

Bahl, Inder J.

Author_Institution

Tyco Electron. M/A-COM, Roanoke

Volume

18

Issue

1

fYear

2008

Firstpage

52

Lastpage

54

Abstract

Design approach and test data for a two-octave bandwidth HPA developed using GaAs based multifunction self aligned gate metal semiconductor field effect transistor with multilevel plating monolithic microwave integrated circuit (MMIC) technology are presented. A low loss matching design technique was used in the development of a two-stage power amplifier. The broadband amplifier has exhibited 8 W power output and better than 16% PAE over the 2.0-8.0 GHz frequency range. To our knowledge, these results represent the state-of-the-art in output power for multi-octave S/C-band power MMIC amplifiers.

Keywords

MESFET integrated circuits; MMIC power amplifiers; UHF amplifiers; field effect MIMIC; wideband amplifiers; MMIC; MSAG MESFET technology; broadband amplifier; frequency 2 GHz to 8 GHz; low loss matching design; multi-octave S/C-band; multifunction self aligned gate; multilevel plating monolithic microwave integrated circuit; power 8 W; power amplifier; self aligned gate metal semiconductor field effect transistor; two-octave bandwidth; Automatic testing; Bandwidth; Broadband amplifiers; Circuit testing; Field effect MMICs; Integrated circuit technology; Integrated circuit testing; MESFETs; Power amplifiers; Semiconductor device testing; Broadband amplifiers; high-power amplifier (HPA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.912021

Filename

4408466